A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel

Lingjie Guo, Effendi Leobandung, Stephen Y. Chou

Research output: Contribution to journalArticle

146 Scopus citations

Abstract

We have demonstrated a room-temperature silicon single-electron transistor memory that consists of (i) a narrow channel metal-oxide-semiconductor field-effect transistor with a width (∼10 nm) smaller than the Debye screening length of single electron; and (ii) a nanoscale polysilicon dot (∼7×7 nm) as the floating gate embedded between the channel and the control gate. We have observed that storing one electron on the floating gate can significantly screen the channel from the potential on the control gate, leading to a discrete shift in the threshold voltage, a staircase relationship between the charging voltage and the threshold shift, and a self-limiting charging process.

Original languageEnglish (US)
Pages (from-to)850-852
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number7
DOIs
StatePublished - Feb 17 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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