A reconfigurable gate architecture for Si/SiGe quantum dots

D. M. Zajac, T. M. Hazard, X. Mi, K. Wang, J. R. Petta

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

Original languageEnglish (US)
Article number223507
JournalApplied Physics Letters
Volume106
Issue number22
DOIs
StatePublished - Jun 1 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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