Abstract
A 64kb SRAM array fabricated in 65nm low-power CMOS operates from 250mV to 1.2V. This wide supply range is enabled by a combination of circuits optimized for both sub-Vt and above-Vtregimes. Reconfigurable circuits are used extensively, as low voltage assist circuits are required for functionality, but they must not limit performance during high voltage operation. The SRAM operates at 20kHz with a 250m V supply and 200MHz with a 1.2V supply. Over this range the leakage power scales by more than 50X.
Original language | English (US) |
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Title of host publication | ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference |
Pages | 282-285 |
Number of pages | 4 |
DOIs | |
State | Published - Dec 31 2008 |
Externally published | Yes |
Event | 34th European Solid-State Circuits Conference, ESSCIRC 2008 - Edinburgh, Scotland, United Kingdom Duration: Sep 15 2008 → Sep 19 2008 |
Other
Other | 34th European Solid-State Circuits Conference, ESSCIRC 2008 |
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Country/Territory | United Kingdom |
City | Edinburgh, Scotland |
Period | 9/15/08 → 9/19/08 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering