A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds

Can Peng, Xiaogan Liang, Stephen Y. Chou

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

A novel method for fabricating nanoimprint lithography (NIL) molds for T-shaped gates (T-gates) for high speed transistors is proposed and demonstrated. This method uses NIL, low pressure chemical vapor deposition and reactive ion etching processes, and avoids costly electron beam lithography and high accuracy alignment technology. Using the T-gate nanoimprint molds fabricated by this novel method, T-gates with a footprint as small as sub-16 nm were achieved. This method can be extended to fabricate a broad range of 3D nanostructures.

Original languageEnglish (US)
Article number185302
JournalNanotechnology
Volume20
Issue number18
DOIs
StatePublished - May 20 2009

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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