A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors

Weimin Zhang; Yang Han; Xiuxiu Zhu; Zhuping Fei; Yu Feng; Neil D. Treat; Hendrik Faber; Natalie Stingelin; Iain McCulloch; Thomas D. Anthopoulos; Martin Heeney

doi:10.1002/adma.201504092

A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors

Weimin Zhang
, Yang Han
, Xiuxiu Zhu
, Zhuping Fei
, Yu Feng
, Neil D. Treat
, Hendrik Faber
, Natalie Stingelin
, Iain McCulloch
, Thomas D. Anthopoulos
, Martin Heeney

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm² V^-1 s^-1 in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm² V^-1 s^-1.

Original language	English (US)
Pages (from-to)	3922-3927
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	20
DOIs	https://doi.org/10.1002/adma.201504092
State	Published - May 25 2016
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

conjugated polymers
interfacial layers
organic semiconductors
organic thin-film transistors

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10.1002/adma.201504092

Cite this

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title = "A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors",

abstract = "A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm2 V-1 s-1 in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm2 V-1 s-1.",

keywords = "conjugated polymers, interfacial layers, organic semiconductors, organic thin-film transistors",

author = "Weimin Zhang and Yang Han and Xiuxiu Zhu and Zhuping Fei and Yu Feng and Treat, \{Neil D.\} and Hendrik Faber and Natalie Stingelin and Iain McCulloch and Anthopoulos, \{Thomas D.\} and Martin Heeney",

note = "Publisher Copyright: {\textcopyright} 2015 The Authors. Published by WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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month = may,

day = "25",

doi = "10.1002/adma.201504092",

language = "English (US)",

volume = "28",

pages = "3922--3927",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "20",

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TY - JOUR

T1 - A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors

AU - Zhang, Weimin

AU - Han, Yang

AU - Zhu, Xiuxiu

AU - Fei, Zhuping

AU - Feng, Yu

AU - Treat, Neil D.

AU - Faber, Hendrik

AU - Stingelin, Natalie

AU - McCulloch, Iain

AU - Anthopoulos, Thomas D.

AU - Heeney, Martin

PY - 2016/5/25

Y1 - 2016/5/25

N2 - A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm2 V-1 s-1 in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm2 V-1 s-1.

AB - A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm2 V-1 s-1 in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm2 V-1 s-1.

KW - conjugated polymers

KW - interfacial layers

KW - organic semiconductors

KW - organic thin-film transistors

UR - https://www.scopus.com/pages/publications/84949293530

UR - https://www.scopus.com/pages/publications/84949293530#tab=citedBy

U2 - 10.1002/adma.201504092

DO - 10.1002/adma.201504092

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AN - SCOPUS:84949293530

SN - 0935-9648

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SP - 3922

EP - 3927

JO - Advanced Materials

JF - Advanced Materials

IS - 20

ER -

A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

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