A new transport regime in the quantum hall effect

D. Shahar, M. Hilke, C. C. Li, D. C. Tsui, S. L. Sondhi, J. E. Cunningham, M. Razeghi

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Abstract

A study of the temperature evolution of the recently discovered reflection symmetry of the diagonal resistivity, ρxx, near quantum Hall-to-insulator transitions, is presented. The data is found to follow a new phenomenological law over a broad range of temperatures, magnetic fields and samples. We note that this law is inconsistent with the scaling description of quantum Hall transitions and indicates the existence of a transport regime distinct from those considered previously.

Original languageEnglish (US)
Pages (from-to)19-23
Number of pages5
JournalSolid State Communications
Volume107
Issue number1
DOIs
StatePublished - Jan 1 1998

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Keywords

  • D. electronic transport
  • D. quantum Hall effect
  • D. quantum localization

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    Shahar, D., Hilke, M., Li, C. C., Tsui, D. C., Sondhi, S. L., Cunningham, J. E., & Razeghi, M. (1998). A new transport regime in the quantum hall effect. Solid State Communications, 107(1), 19-23. https://doi.org/10.1016/S0038-1098(98)00157-4