TY - JOUR
T1 - A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior
AU - Khoury, Jason F.
AU - Rettie, Alexander J.E.
AU - Khan, Mojammel A.
AU - Ghimire, Nirmal J.
AU - Robredo, Iñigo
AU - Pfluger, Jonathan E.
AU - Pal, Koushik
AU - Wolverton, Chris
AU - Bergara, Aitor
AU - Jiang, J. S.
AU - Schoop, Leslie M.
AU - Vergniory, Maia G.
AU - Mitchell, J. F.
AU - Chung, Duck Young
AU - Kanatzidis, Mercouri G.
N1 - Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2019/12/4
Y1 - 2019/12/4
N2 - Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 »000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.
AB - Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 »000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.
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U2 - 10.1021/jacs.9b10147
DO - 10.1021/jacs.9b10147
M3 - Article
C2 - 31697089
AN - SCOPUS:85075774847
SN - 0002-7863
VL - 141
SP - 19130
EP - 19137
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 48
ER -