@inproceedings{b7fcf5954147486ab7ddba4d78ced2b1,
title = "A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests",
abstract = "We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.",
keywords = "Accelerated lifetime tests, a-Si TFTs, current degradation, stability, stretched hyperbola",
author = "T. Liu and S. Wagner and Sturm, {J. C.}",
year = "2011",
doi = "10.1109/IRPS.2011.5784463",
language = "English (US)",
isbn = "9781424491117",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "2E.3.1--2E.3.5",
booktitle = "2011 International Reliability Physics Symposium, IRPS 2011",
note = "49th International Reliability Physics Symposium, IRPS 2011 ; Conference date: 10-04-2011 Through 14-04-2011",
}