A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

T. Liu, S. Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.

Original languageEnglish (US)
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
DOIs
StatePublished - Jun 23 2011
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: Apr 10 2011Apr 14 2011

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period4/10/114/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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