A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

T. Liu; S. Wagner; James Christopher Sturm

doi:10.1109/IRPS.2011.5784463

A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

T. Liu, S. Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼10⁴ when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.

Original language	English (US)
Title of host publication	2011 International Reliability Physics Symposium, IRPS 2011
DOIs	https://doi.org/10.1109/IRPS.2011.5784463
State	Published - Jun 23 2011
Event	49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States Duration: Apr 10 2011 → Apr 14 2011

Other

Other	49th International Reliability Physics Symposium, IRPS 2011
Country/Territory	United States
City	Monterey, CA
Period	4/10/11 → 4/14/11

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/IRPS.2011.5784463

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@inproceedings{b7fcf5954147486ab7ddba4d78ced2b1,

title = "A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests",

abstract = "We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.",

author = "T. Liu and S. Wagner and Sturm, {James Christopher}",

year = "2011",

month = jun,

day = "23",

doi = "10.1109/IRPS.2011.5784463",

language = "English (US)",

isbn = "9781424491117",

booktitle = "2011 International Reliability Physics Symposium, IRPS 2011",

note = "49th International Reliability Physics Symposium, IRPS 2011 ; Conference date: 10-04-2011 Through 14-04-2011",

}

Liu, T, Wagner, S & Sturm, JC 2011, A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests. in 2011 International Reliability Physics Symposium, IRPS 2011., 5784463, 49th International Reliability Physics Symposium, IRPS 2011, Monterey, CA, United States, 4/10/11. https://doi.org/10.1109/IRPS.2011.5784463

TY - GEN

T1 - A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

AU - Liu, T.

AU - Wagner, S.

AU - Sturm, James Christopher

PY - 2011/6/23

Y1 - 2011/6/23

N2 - We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.

AB - We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ∼104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.

UR - http://www.scopus.com/inward/record.url?scp=79959287089&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959287089&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2011.5784463

DO - 10.1109/IRPS.2011.5784463

M3 - Conference contribution

AN - SCOPUS:79959287089

SN - 9781424491117

BT - 2011 International Reliability Physics Symposium, IRPS 2011

T2 - 49th International Reliability Physics Symposium, IRPS 2011

Y2 - 10 April 2011 through 14 April 2011

ER -

A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests

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