@inproceedings{24b859283dd94df88861d57b74cd7229,
title = "A nanogap electrode platform for organic monolayer-film devices",
abstract = "The fabrication and electrical characterization of organic monolayer functionalized, planar silicon nanogap electrode devices is described. Highly doped silicon nanogap electrodes were fabricated with contact separation as small as 200 nm by anisotropic etching of silicon-on-insulator (SOI) substrates using KOH and a patterned metal film as the etch mask. Conductance was greatly improved compared to an untreated device by self-assembly of a monolayer of an aromatic organophosphonate in the nanogap. This device is a prototype for development of self-assembled monolayer-functionalized field-effect transistors involving all-silicon contact electrodes.",
author = "Simon Pfaehler and Kevin Keim and Reka Csiki and Nguyen, {Quoc Hung} and Liao, {Kung Ching} and Martin Stutzmann and Jeffrey Schwartz and Anna Cattani-Scholz and Marc Tornow",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",
year = "2016",
month = nov,
day = "21",
doi = "10.1109/NANO.2016.7751507",
language = "English (US)",
series = "16th International Conference on Nanotechnology - IEEE NANO 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "842--844",
booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",
address = "United States",
}