A model for hydrogen isotope backscattering, trapping and depth profiles in carbon and amorphous silicon

S. A. Cohen, G. M. McCracken

Research output: Contribution to journalArticle

78 Scopus citations

Abstract

A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed.

Original languageEnglish (US)
Pages (from-to)157-166
Number of pages10
JournalJournal of Nuclear Materials
Volume84
Issue number1-2
DOIs
StatePublished - Oct 1 1979

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Fingerprint Dive into the research topics of 'A model for hydrogen isotope backscattering, trapping and depth profiles in carbon and amorphous silicon'. Together they form a unique fingerprint.

  • Cite this