A model for hydrogen isotope backscattering, trapping and depth profiles in carbon and amorphous silicon

S. A. Cohen; G. M. McCracken

doi:10.1016/0022-3115(79)90159-4

A model for hydrogen isotope backscattering, trapping and depth profiles in carbon and amorphous silicon

S. A. Cohen, G. M. McCracken

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Abstract

A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed.

Original language	English (US)
Pages (from-to)	157-166
Number of pages	10
Journal	Journal of Nuclear Materials
Volume	84
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-3115(79)90159-4
State	Published - Oct 1 1979

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
General Materials Science
Nuclear Energy and Engineering

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10.1016/0022-3115(79)90159-4

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title = "A model for hydrogen isotope backscattering, trapping and depth profiles in carbon and amorphous silicon",

abstract = "A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed.",

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AU - McCracken, G. M.

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N2 - A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed.

AB - A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed.

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ER -

A model for hydrogen isotope backscattering, trapping and depth profiles in carbon and amorphous silicon

Abstract

All Science Journal Classification (ASJC) codes

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