A low-disorder metal-oxide-silicon double quantum dot

J. S. Kim, T. M. Hazard, A. A. Houck, S. A. Lyon

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO 2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of 8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/f noise spectrum of 3.4 μeV/Hz 1/2 at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110 ± 26 μeV. This work demonstrates that reproducible MOS spin qubits are feasible and represent a platform for scaling to larger qubit systems in MOS.

Original languageEnglish (US)
Article number043501
JournalApplied Physics Letters
Volume114
Issue number4
DOIs
StatePublished - Jan 28 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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