A hybrid Al 0.10Ga 0.90As/AlAs bilayer electron system with tunable g-factor

E. P. De Poortere; M. Shayegan

doi:10.1063/1.1745111

A hybrid Al _0.10Ga _0.90As/AlAs bilayer electron system with tunable g-factor

E. P. De Poortere, M. Shayegan

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7 Scopus citations

Abstract

A type of modulation-doped heterostructure in which Al _0.10Ga _0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

Original language	English (US)
Pages (from-to)	3837-3839
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1745111
State	Published - May 10 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1745111

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@article{30d63477fcac488a9d69abef0ff43849,

title = "A hybrid Al 0.10Ga 0.90As/AlAs bilayer electron system with tunable g-factor",

abstract = "A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.",

author = "\{De Poortere\}, \{E. P.\} and M. Shayegan",

year = "2004",

month = may,

day = "10",

doi = "10.1063/1.1745111",

language = "English (US)",

volume = "84",

pages = "3837--3839",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - A hybrid Al 0.10Ga 0.90As/AlAs bilayer electron system with tunable g-factor

AU - De Poortere, E. P.

AU - Shayegan, M.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

AB - A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

UR - https://www.scopus.com/pages/publications/2942607961

UR - https://www.scopus.com/inward/citedby.url?scp=2942607961&partnerID=8YFLogxK

U2 - 10.1063/1.1745111

DO - 10.1063/1.1745111

M3 - Article

AN - SCOPUS:2942607961

SN - 0003-6951

VL - 84

SP - 3837

EP - 3839

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

A hybrid Al _0.10Ga _0.90As/AlAs bilayer electron system with tunable g-factor

Abstract

All Science Journal Classification (ASJC) codes

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