A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - May 10 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)