A hybrid Al 0.10Ga 0.90As/AlAs bilayer electron system with tunable g-factor

E. P. De Poortere, Mansour Shayegan

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

Original languageEnglish (US)
Pages (from-to)3837-3839
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number19
DOIs
StatePublished - May 10 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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