A hybrid Al 0.10Ga 0.90As/AlAs bilayer electron system with tunable g-factor

E. P. De Poortere; M. Shayegan

doi:10.1063/1.1745111

A hybrid Al _0.10Ga _0.90As/AlAs bilayer electron system with tunable g-factor

E. P. De Poortere, M. Shayegan

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7 Scopus citations

Abstract

A type of modulation-doped heterostructure in which Al _0.10Ga _0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

Original language	English (US)
Pages (from-to)	3837-3839
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1745111
State	Published - May 10 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1745111

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title = "A hybrid Al 0.10Ga 0.90As/AlAs bilayer electron system with tunable g-factor",

abstract = "A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.",

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year = "2004",

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AU - Shayegan, M.

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N2 - A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

AB - A type of modulation-doped heterostructure in which Al 0.10Ga 0.90As/AlAs 2D electron systems reside side-by-side in two different materials was fabricated. It was shown that the electronic properties of these systems are strongly asymmetric. This structure modulated electrostatically the g-factor of 2D carriers from a vanishingly small to a large value. Mobile carriers were confined to either or both of the two quantum wells with the help of front and back gates.

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JF - Applied Physics Letters

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ER -

A hybrid Al _0.10Ga _0.90As/AlAs bilayer electron system with tunable g-factor

Abstract

All Science Journal Classification (ASJC) codes

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