A high-density 45nm SRAM using small-signal non-strobed regenerative sensing

Naveen Verma, Anantha P. Chandrakasan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Scopus citations

Abstract

A high-density SRAM, composed of 0.25μm2 cells in low-power 45nm CMOS, uses a non-strobed regenerative sense-amplifier that employs offset compensation and avoids strobe-timing uncertainty to increase read-access speed. Two 64kb arrays compare its performance to a conventional sense-amplifier, demonstrating a speed-up of up to 34%.

Original languageEnglish (US)
Title of host publication2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages380-621
Number of pages242
ISBN (Print)9781424420100
DOIs
StatePublished - 2008
Event2008 IEEE International Solid State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: Feb 3 2008Feb 7 2008

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume51
ISSN (Print)0193-6530

Other

Other2008 IEEE International Solid State Circuits Conference, ISSCC
CountryUnited States
CitySan Francisco, CA
Period2/3/082/7/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Verma, N., & Chandrakasan, A. P. (2008). A high-density 45nm SRAM using small-signal non-strobed regenerative sensing. In 2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC (pp. 380-621). [4523216] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 51). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2008.4523216