A high-density 45nm SRAM using small-signal non-strobed regenerative sensing

Naveen Verma; Anantha P. Chandrakasan

doi:10.1109/ISSCC.2008.4523216

A high-density 45nm SRAM using small-signal non-strobed regenerative sensing

Naveen Verma, Anantha P. Chandrakasan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

22 Scopus citations

Abstract

A high-density SRAM, composed of 0.25μm² cells in low-power 45nm CMOS, uses a non-strobed regenerative sense-amplifier that employs offset compensation and avoids strobe-timing uncertainty to increase read-access speed. Two 64kb arrays compare its performance to a conventional sense-amplifier, demonstrating a speed-up of up to 34%.

Original language	English (US)
Title of host publication	2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	380-621
Number of pages	242
ISBN (Print)	9781424420100
DOIs	https://doi.org/10.1109/ISSCC.2008.4523216
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Solid State Circuits Conference, ISSCC - San Francisco, CA, United States Duration: Feb 3 2008 → Feb 7 2008

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	51
ISSN (Print)	0193-6530

Other

Other	2008 IEEE International Solid State Circuits Conference, ISSCC
Country/Territory	United States
City	San Francisco, CA
Period	2/3/08 → 2/7/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISSCC.2008.4523216

Cite this

Verma, N., & Chandrakasan, A. P. (2008). A high-density 45nm SRAM using small-signal non-strobed regenerative sensing. In 2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC (pp. 380-621). Article 4523216 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 51). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2008.4523216

Verma, Naveen ; Chandrakasan, Anantha P. / A high-density 45nm SRAM using small-signal non-strobed regenerative sensing. 2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC. Institute of Electrical and Electronics Engineers Inc., 2008. pp. 380-621 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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title = "A high-density 45nm SRAM using small-signal non-strobed regenerative sensing",

abstract = "A high-density SRAM, composed of 0.25μm2 cells in low-power 45nm CMOS, uses a non-strobed regenerative sense-amplifier that employs offset compensation and avoids strobe-timing uncertainty to increase read-access speed. Two 64kb arrays compare its performance to a conventional sense-amplifier, demonstrating a speed-up of up to 34%.",

author = "Naveen Verma and Chandrakasan, {Anantha P.}",

year = "2008",

doi = "10.1109/ISSCC.2008.4523216",

language = "English (US)",

isbn = "9781424420100",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC",

address = "United States",

note = "2008 IEEE International Solid State Circuits Conference, ISSCC ; Conference date: 03-02-2008 Through 07-02-2008",

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Verma, N & Chandrakasan, AP 2008, A high-density 45nm SRAM using small-signal non-strobed regenerative sensing. in 2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC., 4523216, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 51, Institute of Electrical and Electronics Engineers Inc., pp. 380-621, 2008 IEEE International Solid State Circuits Conference, ISSCC, San Francisco, CA, United States, 2/3/08. https://doi.org/10.1109/ISSCC.2008.4523216

A high-density 45nm SRAM using small-signal non-strobed regenerative sensing. / Verma, Naveen; Chandrakasan, Anantha P.
2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC. Institute of Electrical and Electronics Engineers Inc., 2008. p. 380-621 4523216 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 51).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - A high-density SRAM, composed of 0.25μm2 cells in low-power 45nm CMOS, uses a non-strobed regenerative sense-amplifier that employs offset compensation and avoids strobe-timing uncertainty to increase read-access speed. Two 64kb arrays compare its performance to a conventional sense-amplifier, demonstrating a speed-up of up to 34%.

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Verma N, Chandrakasan AP. A high-density 45nm SRAM using small-signal non-strobed regenerative sensing. In 2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC. Institute of Electrical and Electronics Engineers Inc. 2008. p. 380-621. 4523216. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2008.4523216

A high-density 45nm SRAM using small-signal non-strobed regenerative sensing

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All Science Journal Classification (ASJC) codes

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