A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si1-xGex/Si HBT's

Matutinović-Krstelj; V. Venkataraman; E. J. Prinz; J. C. Sturm; C. W. Magee

A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si_1-xGe_x/Si HBT's

Matutinović-Krstelj, V. Venkataraman, E. J. Prinz, J. C. Sturm, C. W. Magee

Research output: Contribution to journal › Conference article › peer-review

Abstract

We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si_1-xGe_x/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect to Si devices, including the effects of reduced density of states in the strained Si₁ - _xGe_x base and the effective bandgap due to Ge and heavy doping, is presented.

Original language	English (US)
Pages (from-to)	87-90
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1993
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: Dec 5 1993 → Dec 8 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si1-xGex/Si HBT's",

abstract = "We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect to Si devices, including the effects of reduced density of states in the strained Si1 - xGex base and the effective bandgap due to Ge and heavy doping, is presented.",

author = "Matutinovi{\'c}-Krstelj and V. Venkataraman and Prinz, {E. J.} and Sturm, {J. C.} and Magee, {C. W.}",

note = "Publisher Copyright: {\textcopyright} 1993 IEEE; Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",

year = "1993",

language = "English (US)",

pages = "87--90",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

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T1 - A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si1-xGex/Si HBT's

AU - Matutinović-Krstelj,

AU - Venkataraman, V.

AU - Prinz, E. J.

AU - Sturm, J. C.

AU - Magee, C. W.

PY - 1993

Y1 - 1993

N2 - We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect to Si devices, including the effects of reduced density of states in the strained Si1 - xGex base and the effective bandgap due to Ge and heavy doping, is presented.

AB - We studied the effects of heavy doping and Ge concentration in the base on the dc performance of Si/Si1-xGex/Si npn HBT's. The lateral drift mobility of holes in heavily doped epitaxial SiGe bases is found to be lower than bulk Si values and independent of Ge content, and the Hall scattering factor is less than unity and decreases with increasing Ge concentration. For the vertical electron transport we have observed bandgap narrowing due to heavy base doping which is, to first order, independent of Ge concentration. Finally, a model for the collector current enhancement with respect to Si devices, including the effects of reduced density of states in the strained Si1 - xGex base and the effective bandgap due to Ge and heavy doping, is presented.

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M3 - Conference article

AN - SCOPUS:0027855419

SN - 0163-1918

SP - 87

EP - 90

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting

Y2 - 5 December 1993 through 8 December 1993

ER -

A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si_1-xGe_x/Si HBT's

Abstract

All Science Journal Classification (ASJC) codes

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