A Compact SiGe Stacked Common-Base Dual-Band PA With 20/18.8 dBm Psatat 36/64 GHz Supporting Concurrent Modulation

Zheng Liu, Emir Ali Karahan, Kaushik Sengupta

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a compact, concurrent dual-band (36/64 GHz) linear power amplifier in 90 nm SiGe technology. To simultaneously overcome the gain and power limitation of conventional common-emitter (CE) silicon device at mm-wave, the stacked common-base (SCB) topology in SiGe is studied and utilized as PA cell. A highly efficient dual-band output network enables the optimum load-line matching for two widely separated frequencies. The proposed PA achieves 20/18.8 dBm $P_{\mathrm {sat}}$ , 25/22.5% PAE at 36/64 GHz supporting two concurrent 32 QAM signals (total data rate of 9 Gb/s) with 9.5/7.8 dBm linear average power respectively, and concurrent PAE of 8.9%. To the best of the authors' knowledge, this prototype achieves highest dual frequency output power, PAE, and one of the first concurrent dual-band modulation among silicon-based mm-wave PAs, while still maintaining a highly compact footprint.

Original languageEnglish (US)
Pages (from-to)720-723
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume32
Issue number6
DOIs
StatePublished - Jun 1 2022

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Carrier aggregation
  • SiGe
  • common-base (CB)
  • concurrent dual-band
  • millimeter-wave
  • stacked power amplifier

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