A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

Sotiris Alexandrou, Chia Chi Wang, Thomas Y. Hsiang, M. Y. Liu, S. Y. Chou

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


The ultrafast characteristics of crystalline-silicon metal-semiconductor- metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths.

Original languageEnglish (US)
Pages (from-to)2507-2509
Number of pages3
JournalApplied Physics Letters
Issue number20
StatePublished - 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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