A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy

Naveen Verma, Anantha P. Chandrakasan

Research output: Contribution to journalArticlepeer-review

369 Scopus citations


Aggressively scaling the supply voltage of SRAMs greatly minimizes their active and leakage power, a dominating portion of the total power in modern ICs. Hence, energy constrained applications, where performance requirements are secondary, benefit significantly from an SRAM that offers read and write functionality at the lowest possible voltage. However, bit-cells and architectures achieving very high density conventionally fail to operate at low voltages. This paper describes a high density SRAM in 65 nm CMOS that uses an 8T bit-cell to achieve a minimum operating voltage of 350 mV. Buffered read is used to ensure read stability, and peripheral control of both the bit-cell supply voltage and the read-buffer's foot voltage enable sub-write and read without degrading the bit-cell's density. The plaguing area-offset tradeoff in modern sense-amplifiers is alleviated using redundancy, which reduces read errors by a factor of five compared to device up-sizing. At its lowest operating voltage, the entire 256 kb SRAM consumes 2.2 W in leakage power.

Original languageEnglish (US)
Pages (from-to)141-149
Number of pages9
JournalIEEE Journal of Solid-State Circuits
Issue number1
StatePublished - Jan 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


  • CMOS memory circuits
  • Cache memories
  • SRAM chips
  • leakage currents
  • low-power electronics
  • redundancy


Dive into the research topics of 'A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy'. Together they form a unique fingerprint.

Cite this