80-110-GHz Broadband Linear PA with 33% Peak PAE and Comparison of Stacked Common Base and Common Emitter PA in InP

Zheng Liu, Tushar Sharma, Kaushik Sengupta

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a high efficiency, compact 80-110-GHz InP power amplifier (PA) based on stacked common base (CB) topology and a counterpart design using conventional stacked common emitter (CE) topology. The comparison between the two exhibits that the former delivers higher power gain, superior-gain compression behavior (linearity), and higher back-off efficiency in W-band in 250-nm InP heterojunction bipolar transistor (HBT). At 90 GHz, the stacked CB/CE PA achieves 11.8 dB/6dB gain, 33%/34% peak PAE, 16.8%/14.5% PAE at 6-dB back-off, and Psat of 18.7 dBm/19.6 dBm. Modulation test exhibits an EVM of 2.38% at 11.8-dBm average power supporting 3 Gbps 64-QAM for the stacked CB PA. The stacked CB PA with 17.9-18.9-dBm Psat across 80-110 GHz demonstrates one of the highest efficiency, broadband and linear PAs in W-band using InP technology.

Original languageEnglish (US)
Article number9381254
Pages (from-to)756-759
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume31
Issue number6
DOIs
StatePublished - Jun 2021

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Broadband
  • InP
  • W-band
  • common base (CB)
  • high efficiency
  • millimeter-wave
  • stacked power amplifier

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