80-110 GHz Broadband Linear PA with 33% peak PAE and Comparison of Stacked Common-Base and Common-Emitter PA in InP

Zheng Liu, Tushar Sharma, Kaushik Sengupta

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a high efficiency, compact 80-110 GHz InP power amplifier based on stacked common-base (CB) topology and a counterpart design using conventional stacked common-emitter (CE) topology. The comparison between the two exhibits that the former delivers higher power gain, superior gain compression behavior (linearity) and higher back-off efficiency in W band in 250nm InP HBT. At 90 GHz, the stacked CB/CE PA achieves 11. 8 dB/6dB gain, 33%/34% peak PAE, 16.8%/14.5% PAE at 6dB back-off and Psat of 18.7 dBm/19.6 dBm. Modulation test exhibits an EVM of 2.38% at 11.8 dBm average power supporting 3 Gbps 64QAM for the stacked CB PA. The stacked CB PA with 17.9-18.9 dBm Psat across 80-110 GHz demonstrates one of the highest efficiency, broadband and linear PA in W-band using InP technology.

Original languageEnglish (US)
JournalIEEE Microwave and Wireless Components Letters
DOIs
StateAccepted/In press - 2021

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Broadband
  • Common-Base
  • Gain
  • Heterojunction bipolar transistors
  • High Efficiency
  • III-V semiconductor materials
  • Impedance matching
  • Indium phosphide
  • InP
  • Linearity
  • Millimeter-Wave
  • Stacked power amplifier
  • Topology
  • W-band

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