6.2 GHz digital CMOS circuits in thin SIMOX films

G. K. Celler, Avid Kamgar, H. I. Cong, R. L. Field, S. J. Hillenius, W. S. Lindenberger, L. E. Trimble, J. C. Sturm

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations


Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

Original languageEnglish (US)
Number of pages2
StatePublished - 1989
Externally publishedYes
EventIEEE SOS/SOI Technology Conference 1989 - Stateline, NV, USA
Duration: Oct 3 1989Oct 5 1989


OtherIEEE SOS/SOI Technology Conference 1989
CityStateline, NV, USA

All Science Journal Classification (ASJC) codes

  • General Engineering


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