6.2 GHz digital CMOS circuits in thin SIMOX films

G. K. Celler; Avid Kamgar; H. I. Cong; R. L. Field; S. J. Hillenius; W. S. Lindenberger; L. E. Trimble; J. C. Sturm

6.2 GHz digital CMOS circuits in thin SIMOX films

G. K. Celler, Avid Kamgar, H. I. Cong, R. L. Field, S. J. Hillenius, W. S. Lindenberger, L. E. Trimble, J. C. Sturm

Research output: Contribution to conference › Paper › peer-review

Abstract

Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

Original language	English (US)
Pages	139-140
Number of pages	2
State	Published - 1989
Externally published	Yes
Event	IEEE SOS/SOI Technology Conference 1989 - Stateline, NV, USA Duration: Oct 3 1989 → Oct 5 1989

Other

Other	IEEE SOS/SOI Technology Conference 1989
City	Stateline, NV, USA
Period	10/3/89 → 10/5/89

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "6.2 GHz digital CMOS circuits in thin SIMOX films",

abstract = "Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.",

author = "Celler, {G. K.} and Avid Kamgar and Cong, {H. I.} and Field, {R. L.} and Hillenius, {S. J.} and Lindenberger, {W. S.} and Trimble, {L. E.} and Sturm, {J. C.}",

year = "1989",

language = "English (US)",

pages = "139--140",

note = "IEEE SOS/SOI Technology Conference 1989 ; Conference date: 03-10-1989 Through 05-10-1989",

}

TY - CONF

T1 - 6.2 GHz digital CMOS circuits in thin SIMOX films

AU - Celler, G. K.

AU - Kamgar, Avid

AU - Cong, H. I.

AU - Field, R. L.

AU - Hillenius, S. J.

AU - Lindenberger, W. S.

AU - Trimble, L. E.

AU - Sturm, J. C.

PY - 1989

Y1 - 1989

N2 - Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

AB - Summary form only given. CMOS dual-modulus prescaler circuits built in very thin SIMOX films are discussed. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

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UR - http://www.scopus.com/inward/citedby.url?scp=0024917201&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0024917201

SP - 139

EP - 140

T2 - IEEE SOS/SOI Technology Conference 1989

Y2 - 3 October 1989 through 5 October 1989

ER -

6.2 GHz digital CMOS circuits in thin SIMOX films

Abstract

Other

All Science Journal Classification (ASJC) codes

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