TY - GEN
T1 - 61.3
T2 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
AU - Wagner, Sigurd
AU - Han, Lin
AU - Hekmatshoar, Bahman
AU - Song, Katherine
AU - Mandlik, Prashant
AU - Cherenack, Kunigunde H.
AU - Sturm, James Christopher
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Amorphous silicon thin-film transistors were designed for roll-out OLED screens in hand-held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half-life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.
AB - Amorphous silicon thin-film transistors were designed for roll-out OLED screens in hand-held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half-life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.
UR - http://www.scopus.com/inward/record.url?scp=80755188050&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80755188050&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:80755188050
SN - 9781618390950
T3 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
SP - 917
EP - 920
BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Y2 - 23 May 2010 through 28 May 2010
ER -