Abstract
Amorphous silicon thin-film transistors were designed for roll-out OLED screens in hand-held devices. Separate TFTs reached a saturation current of 6 μA/square, an output current half-life extrapolating to 1,000 years, and were rolled to 1 mm diameter. All three parameters set new world records.
Original language | English (US) |
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Pages (from-to) | 917-920 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 41 1 |
DOIs | |
State | Published - May 2010 |
All Science Journal Classification (ASJC) codes
- General Engineering