3.5 μm strain balanced GaInAs/AlInAs quantum cascade lasers operating at room temperature

Feng Xie, Catherine Caneau, Herve P. LeBlanc, Nick J. Visovsky, Yin Wang, Gerard Wysocki, Lawrence C. Hughes, Chung En Zah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We demonstrate room temperature lasing of quantum cascade lasers (QCLs) operating at 3.45 and 3.55 μm under pulsed and continuous wave (CW) operations, respectively. To the best of our knowledge those are the shortest wavelengths ever achieved at room temperature from QCLs with strain balanced GaInAs/AlInAs material on InP substrate. With the back facet high reflection coated, a maximum output power of 60 mW was obtained at 10 °C under CW operation. A tuning range of 124 cm-1 was obtained in a pulsed mode in external cavity configuration.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers X
DOIs
StatePublished - Mar 31 2011
EventNovel In-Plane Semiconductor Lasers X - San Francisco, CA, United States
Duration: Jan 25 2011Jan 28 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7953
ISSN (Print)0277-786X

Other

OtherNovel In-Plane Semiconductor Lasers X
CountryUnited States
CitySan Francisco, CA
Period1/25/111/28/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • External cavity
  • GaInAs
  • Mid-infrared
  • Quantum cascade lasers

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