3.3 μm pyrometry in single sided RTA from 400-700 °C using in-situ measurement of reflection and transmission

D. L. Marcy, S. Chial, M. Benes, J. C. Sturm

Research output: Contribution to journalConference article

Abstract

Pyrometry of silicon wafers under 700 °C at wavelengths over 1 μm is difficult because lightly doped wafers become partially transparent. In this work, a modified commercial RTCVD reactor with 8″ wafer capability was used to study the temperature measurement of Si wafers over the range of 400-700 °C using top and bottom pyrometric detectors. We present initial results on measurements of both reflection and transmission in-situ to determine emissivity at 3.3 μm. For heavily doped wafers emissivity was independent of temperature and the measured temperature by pyrometry agreed well with that measured by thermocouple for 400-700 °C. For lightly doped wafers, emissivity was temperature dependent due to the increased transparency of the wafer at low temperatures. Using fixed emissivity, the measured temperature severely underestimates the actual temperature below 550 °C. By calculating emissivity from the measured reflection and transmission, accurate temperature measurement was achieved from 400-700 °C without any a priori knowledge of the wafer.

Original languageEnglish (US)
Pages (from-to)23-28
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume470
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 1 1997Apr 4 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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