A discussion on 30 nm channel length pentacene transistors was presented. The transistors were fabricated with channel length of the order of tens of micrometers using optical lithigraphy or by deposition through a stencil. It was found that their field-effect mobilities were of the order of 10 -2 cm2V-1 s-1, similar to values measured in transistors with larger channel lengths and bottom contacts.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Oct 2 2003|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering