30 nm Channel Length Pentacene Transistors

Yuanjia Zhang; Jason R. Petta; Samtha Ambily; Yulong Shen; Daniel C. Ralph; George G. Malliaras

doi:10.1002/adma.200305158

30 nm Channel Length Pentacene Transistors

Yuanjia Zhang, Jason R. Petta, Samtha Ambily, Yulong Shen, Daniel C. Ralph, George G. Malliaras

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

A discussion on 30 nm channel length pentacene transistors was presented. The transistors were fabricated with channel length of the order of tens of micrometers using optical lithigraphy or by deposition through a stencil. It was found that their field-effect mobilities were of the order of 10 ^-2 cm²V^-1 s^-1, similar to values measured in transistors with larger channel lengths and bottom contacts.

Original language	English (US)
Pages (from-to)	1632-1635
Number of pages	4
Journal	Advanced Materials
Volume	15
Issue number	19
DOIs	https://doi.org/10.1002/adma.200305158
State	Published - Oct 2 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.200305158

Cite this

@article{3b14b28b9520495099b2b48632e54b07,

title = "30 nm Channel Length Pentacene Transistors",

abstract = "A discussion on 30 nm channel length pentacene transistors was presented. The transistors were fabricated with channel length of the order of tens of micrometers using optical lithigraphy or by deposition through a stencil. It was found that their field-effect mobilities were of the order of 10 -2 cm2V-1 s-1, similar to values measured in transistors with larger channel lengths and bottom contacts.",

author = "Yuanjia Zhang and Petta, {Jason R.} and Samtha Ambily and Yulong Shen and Ralph, {Daniel C.} and Malliaras, {George G.}",

year = "2003",

month = oct,

day = "2",

doi = "10.1002/adma.200305158",

language = "English (US)",

volume = "15",

pages = "1632--1635",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "19",

}

TY - JOUR

T1 - 30 nm Channel Length Pentacene Transistors

AU - Zhang, Yuanjia

AU - Petta, Jason R.

AU - Ambily, Samtha

AU - Shen, Yulong

AU - Ralph, Daniel C.

AU - Malliaras, George G.

PY - 2003/10/2

Y1 - 2003/10/2

N2 - A discussion on 30 nm channel length pentacene transistors was presented. The transistors were fabricated with channel length of the order of tens of micrometers using optical lithigraphy or by deposition through a stencil. It was found that their field-effect mobilities were of the order of 10 -2 cm2V-1 s-1, similar to values measured in transistors with larger channel lengths and bottom contacts.

AB - A discussion on 30 nm channel length pentacene transistors was presented. The transistors were fabricated with channel length of the order of tens of micrometers using optical lithigraphy or by deposition through a stencil. It was found that their field-effect mobilities were of the order of 10 -2 cm2V-1 s-1, similar to values measured in transistors with larger channel lengths and bottom contacts.

UR - http://www.scopus.com/inward/record.url?scp=0142231467&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142231467&partnerID=8YFLogxK

U2 - 10.1002/adma.200305158

DO - 10.1002/adma.200305158

M3 - Article

AN - SCOPUS:0142231467

SN - 0935-9648

VL - 15

SP - 1632

EP - 1635

JO - Advanced Materials

JF - Advanced Materials

IS - 19

ER -

30 nm Channel Length Pentacene Transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this