30 nm Channel Length Pentacene Transistors

Yuanjia Zhang, Jason R. Petta, Samtha Ambily, Yulong Shen, Daniel C. Ralph, George G. Malliaras

Research output: Contribution to journalArticle

92 Scopus citations

Abstract

A discussion on 30 nm channel length pentacene transistors was presented. The transistors were fabricated with channel length of the order of tens of micrometers using optical lithigraphy or by deposition through a stencil. It was found that their field-effect mobilities were of the order of 10 -2 cm2V-1 s-1, similar to values measured in transistors with larger channel lengths and bottom contacts.

Original languageEnglish (US)
Pages (from-to)1632-1635
Number of pages4
JournalAdvanced Materials
Volume15
Issue number19
DOIs
StatePublished - Oct 2 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of '30 nm Channel Length Pentacene Transistors'. Together they form a unique fingerprint.

  • Cite this

    Zhang, Y., Petta, J. R., Ambily, S., Shen, Y., Ralph, D. C., & Malliaras, G. G. (2003). 30 nm Channel Length Pentacene Transistors. Advanced Materials, 15(19), 1632-1635. https://doi.org/10.1002/adma.200305158