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25-nm p-channel vertical MOSFET's with SiGeC source-drains
Min Yang
, Chia Lin Chang
, Malcolm Carroll
,
J. C. Sturm
Electrical and Computer Engineering
Keller Center for Innovation in Engineering Education
Princeton Materials Institute
Research output
:
Contribution to journal
›
Article
›
peer-review
46
Scopus citations
Overview
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Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Channel Length
66%
Low-Temperature
33%
Side Wall
33%
Source Region
33%
Drain Region
33%
Keyphrases
Vertical MOSFET
100%
Low Temperature Epitaxy
33%
Gate Oxidation
33%