140-GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layer

M. Y. Liu, E. Chen, S. Y. Chou

Research output: Contribution to journalArticle

70 Scopus citations

Abstract

Metal-semiconductor-metal photodetectors with 100-nm finger spacing and width on a silicon-on-insulator substrate that has a scaled active layer were fabricated and characterized using electro-optic sampling. The unique device structure cuts off carriers generated deep inside the semiconductor substrate, resulting in a measured response time of 3.2 ps and a bandwidth of 140 GHz. Furthermore, the detector structure makes the detector's speed independent of the light penetration depth and thus the light wavelength. Good metal-semiconductor Schottky contact and low detector dark current have been achieved.

Original languageEnglish (US)
Pages (from-to)887-888
Number of pages2
JournalApplied Physics Letters
Volume65
Issue number7
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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