10 nm electron beam lithography and sub-50 nm overlay using a modified scanning electron microscope

P. B. Fischer, Stephen Y. Chou

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

Gratings of 10 nm wide metal lines 30 nm apart, and quantum transistor gates with 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope operated at 35 keV and liftoff of Ni/Au. Furthermore, multilevel electron beam lithography with a standard deviation (3σ) of an overlay accuracy (30 deviation) of 50 nm has been achieved using the same modified scanning electron microscope.

Original languageEnglish (US)
Pages (from-to)2989-2991
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number23
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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