ν=5/2 fractional quantum hall effect at 10 T: Implications for the Pfaffian state

Chi Zhang, T. Knuuttila, Yanhua Dai, R. R. Du, L. N. Pfeiffer, K. W. West

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Abstract

We report on the magnetotransport (including tilt fields) around Landau level filling factor ν=5/2 in a high-purity modulation-doped GaAs/AlGaAs quantum well with twice the electron density of standard samples. A quantized 5/2 Hall plateau is observed at B≈10T, with an activation gap ∼125mK; the plateau can persist up to ∼25° tilt field. This finding is discussed in the context of a proposed Moore-Read Pfaffian (or anti-Pfaffian) wave function being a possible ground state at 5/2. The tilt fields induce a background resistance at 5/2 that could be either isotropic or anisotropic, depending simply on the in-plane magnetic field direction with respect to the GaAs crystalline axis. Such data indicate a substantial coupling between the 5/2 collective phases and the GaAs crystal.

Original languageEnglish (US)
Article number166801
JournalPhysical review letters
Volume104
Issue number16
DOIs
StatePublished - Apr 21 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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