ν=1/2 fractional quantum Hall effect in tilted magnetic fields

S. Hasdemir, Yang Liu, H. Deng, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor ν=1/2 as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong ν=1/2 fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like. The evolution is qualitatively similar to the one seen, in the absence of parallel field, as a function of increasing the electron density in the quantum well, but there are some notable differences.

Original languageEnglish (US)
Article number045113
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number4
DOIs
StatePublished - Jan 14 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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