Abstract
We report novel femtosecond time-resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8- and 11-monolayer-thick GaAs samples, respectively.
Original language | English (US) |
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Pages (from-to) | 1681-1683 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 54 |
Issue number | 17 |
DOIs | |
State | Published - 1989 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)